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Ordering number : ENN6683
5HP01S
P-Channel Silicon MOSFET
5HP01S
Ultrahigh Speed Switching
Features
* * *
Applications
Package Dimensions
unit : mm 2192
[5HP01S]
0.3 0.75 0.6 0 to 0.1
Low ON-resistance . Ultrahigh-speed switching. 4V drive.
3
0.8 1.6
0.2
1
2
0.4
0.5 0.5 1.6
0.4
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source V oltage Gate-to-Source V oltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle 1% Conditions Ratings
0.1max
0.1
1 : Gate 2 : Source 3 : Drain SANYO : SMCP
Unit - 50 20 - 0.07 - 0.28 0.15 150 V V A A W C C
- 55 to +150
Electrical Characteristics a t Ta=25C
Parameter Drain-to-Source Breakdown V oltage Symbol V (BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Conditions ID=- 1mA, V GS =0 VDS=- 50V, V GS=0 VGS =16V, V DS=0 VDS=- 10V, I D=- 100A VDS=-10V, I D=-40mA ID=- 40mA, V GS =- 10V ID=- 20mA, V GS =- 4V Ratings min -50 - 10 10 -1 50 70 17 23 22 32 -2.5 typ max Unit V A A V mS
Zero-Gate V oltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance
Continued on ne xt pa ge.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12201 TS IM TA-3123 No.6683-1/4
5HP01S
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward V oltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=- 10V, f=1MHz VDS=- 10V, f=1MHz VDS=- 10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=- 10V, V GS =- 10V, I D=- 70mA VDS=- 10V, V GS =- 10V, I D=- 70mA VDS=- 10V, V GS =- 10V, I D=- 70mA IS=- 70mA, V GS =0 Ratings min typ 6.2 4.0 1.3 13 10 100 150 1.32 0.17 0.34 - 0.85 - 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Marking : XC
Switching Time Test Circuit
0V --10V VIN VIN VDD= --25V ID= --40mA RL=625
PW=10s D.C.1%
D G
VOUT
5HP01S P.G 50
S
--0.07
ID -- VDS
0V --8 .
--0.14
ID -- VGS
25C
VDS= --10V
25C
--5
V
--6
--0.06
--0.12
.0
Drain Current, ID -- A
Drain Current, ID -- A
--1 0
--0.04
--0.08
--0.03
--0.06
--3.0V
--0.02
--0.04
--0.01 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
VGS= --2.5V
--1.6 --1.8 --2.0
--0.02 0 0 --1 --2 --3 --4 --6 IT00104
Drain-to-Source Voltage, VDS -- V
50
IT00103 100
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
Ta=25C
Static Drain-to-Source On-State Resistance, RDS(on) --
RDS(on) -- ID
VGS= --10V
Static Drain-to-Source On-State Resistance, RDS(on) --
45 40 35 30 25
7
5
3
--40mA ID= --20mA
Ta=75C
2
20 15 10 --2
25C --25C
--3
--4
--5
--6
--7
--8
--9
--10
10 --0.01
2
3
5
7
75C
--0.05
. --4
.0V
0V
--0.10
Ta= --
--0.1
2
3
Gate-to-Source Voltage, VGS -- V
IT00105
Drain Current, ID -- A
IT00106
No.6683-2/4
5HP01S
1000 7
RDS(on) -- ID
VGS= --4V
Static Drain-to-Source On-State Resistance, RDS(on) --
40 35 30 25 20 15 10 5 0 --60
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS(on) --
5 3 2
100 7 5 3 2
4V = -V GS A, 10V = -20m = -GS ID A, V 40m = -ID
Ta=75C 25C --25C
2 3 5 7 2 3
10 --0.01
--0.1
--40
--20
0
20
40
60
80
100
120
140
160
Drain Current, ID -- A
1.0
IT00107 3
yfs -- ID
Ambient Temperature, Ta -- C
IT00108
IF -- VSD
VGS = 0
Forward Transfer Admittance, yfs -- S
7 5 3 2
VDS= --10V
2
Forward Current, IF -- A
--0.1 7 5
0.1 7 5 3 2
2 Ta= --
5C
25C
75C
3
C
25C
0.01 --0.01
2
3
5
7
--0.1
2
3
--0.01 --0.5
--0.6
Ta=7 5
2
--0.7
--0.8
--25C
--0.9
--1.0
--1.1
--1.2
Drain Current, ID -- A
1000 7 5
IT00109 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1
SW Time -- ID
tf
Diode Forward Voltage, VSD -- V
IT00110
Ciss, Coss, Crss -- VDS
f=1MHz
VDD= --25V VGS= --10V
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
3 2 100 7 5 3 2 10 7 5 3 2 1.0 --0.01 2
td(off)
Ciss Coss Crss
td(on) tr
3
5
7
Drain Current, ID -- A
--10 --9
--0.1 IT00111 0.20
0
--5
--10
--15
--20
--25
--30
--35
--40
--45
--50
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
IT00112
PD -- Ta
--8 --7 --6 --5 --4 --3 --2 --1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Allowable Power Dissipation, PD -- W
Gate-to-Sourse Voltage, VGS -- V
VDS= --10V ID= --0.07A
0.15
0.10
0.05
0 0 20 40 60 80 100 120 140 160
Total Gate Charge, Qg -- nC
IT00113
Ambient Temperature, Ta -- C
IT02381
No.6683-3/4
5HP01S
Note on usa ge : Since the 5HP01S is designed f or high-speed s witching a pplica tions, please a void using this de vice in the vicinity of highl y charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2001. Specifications and information herein are subject to change without notice.
PS No.6683-4/4

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